Study of intermodulation in RF MEMS variable capacitors

This paper provides a rigorous study of the causes and physical origins of intermodulation distortion (IMD) in RF microelectromechanical systems (MEMS) capacitors, its analytical dependence on the MEMS device design parameters, and its effects in RF systems. It is shown that not only third-order products exist, but also fifth order and higher. The high-order terms are mainly originated by the nonlinear membrane displacement versus applied voltage and, in the case considered in this study, with an additional contribution from the nonlinear dependence of the reflection coefficient phase on the displacement. It is also shown that the displacement nonlinear behavior also contributes to the total mean position of the membrane. In order to study these effects in depth, an analytical frequency-dependent IMD model for RF MEMS based on a mobile membrane is proposed and particularized to the case of a MEMS varactor-a device for which IMD can be significant. The model is validated, up to the fifth order, theoretically (using harmonic balance) and empirically (the IMD of a MEMS varactor is measured). To this end, a two-tone IMD reflection measurement system for MEMS is proposed.Peer Reviewe

Stability analysis with Pole-zero Identification: unveiling the critical dynamics of microwave circuits

The term pole-zero identification refers to obtaining the poles and zeros of a linear (or linearized) system described by its frequency response. This is usually done using optimization techniques (such as least squares, maximum likelihood estimation, or vector fitting) that fit a given frequency response of the linear system to a transfer function defined as the ratio of two polynomials [1], [2]. This kind of linear system identification in the frequency domain has numerous applications in a wide variety of engineering fields, such as mechanical systems, power systems, and electromagnetic compatibility. In the microwave domain, rational approximation is increasingly used to obtain black-box models of complex passive structures for model order reduction and efficient transient simulation. An extensive bibliography on the matter can be found in [3]-[6]. In this article, we focus on a different application of pole-zero identification. We review the different ways in which pole-zero identification can be applied to nonlinear circuit design, for power-amplifier stability analysis, and more. We provide a comprehensive view of recent approaches through illustrative application examples. Other uses for rational-approximation techniques are beyond the scope of this article.This work was supported in part by the French Space Agency (CNES) under projects R-S10/TG-0001-019 and R-S14/TG-0001-019; by a joint Ph.D. research grant from CNES and Thales Alenia Space, France; by project TEC2015-67217-R (MINECO/FEDER); and by the Basque Country Government through project IT1104-16

Study of intermodulation in RF MEMS variable capacitors

This paper provides a rigorous study of the causes and physical origins of intermodulation distortion (IMD) in RF microelectromechanical systems (MEMS) capacitors, its analytical dependence on the MEMS device design parameters, and its effects in RF systems. It is shown that not only third-order products exist, but also fifth order and higher. The high-order terms are mainly originated by the nonlinear membrane displacement versus applied voltage and, in the case considered in this study, with an additional contribution from the nonlinear dependence of the reflection coefficient phase on the displacement. It is also shown that the displacement nonlinear behavior also contributes to the total mean position of the membrane. In order to study these effects in depth, an analytical frequency-dependent IMD model for RF MEMS based on a mobile membrane is proposed and particularized to the case of a MEMS varactor-a device for which IMD can be significant. The model is validated, up to the fifth order, theoretically (using harmonic balance) and empirically (the IMD of a MEMS varactor is measured). To this end, a two-tone IMD reflection measurement system for MEMS is proposed.Peer Reviewe